| Brand | Samsung |
|---|---|
| Model | M.2 NVMe Gen5 |
| Interface | PCIe® 5.0 x4, NVMe™ 2.0 |
| Form Factor | M.2 (2280) |
| Seq. Read/Write (MB/s) | 14,700 / 13,400 |
| Ran. Read/Write (IOPS ,QD32) | 1,850K / 2,600K |
| Active Power (Read/Write) | 8.1W / 7.9W |
| Data Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Capacity | 2TB |
| NAND | Samsung V NAND TLC (V8) |
| Controller | Samsung In-House Controller |
| DRAM Cache Memory | 2GB LPDDR4X |
| Total Bytes Written (TBW) | 1200 |

