-6%
| Interface | PCIe Gen 3.0 x 4, NVMe 1.3 |
| Sequential Read | Up to 3,500 MB/s |
| Sequential Write | Up to 3,200 MB/s |
| Storage Memory | Samsung V-NAND 3-bit MLC |
| Controller | Samsung in-house controller |
| Cache Memory | Samsung 512MB Low Power DDR4 SDRAM |
| Special Feature | S.M.A.R.T TRIM Auto Garbage Collection Algorithm AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) Device Sleep Mode |
| MTBF | 1.5 Million Hours Reliability |
