-15%
| Model | M.2 NVMe Gen4 |
|---|
| Model | MZ-V8P1T0BW |
| DIMENSION (WxHxD) | 3.15″ X 0.94 ” X 0.87″ |
| STORAGE MEMORY | Samsung V-NAND 3-bit MLC |
| CONTROLLER | Samsung in-house Controller |
| CACHE MEMORY | Samsung 1GB Low Power DDR4 SDRAM |
| Special Feature | TRIM S.M.A.R.T Auto Garbage Collection Algorithm AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) DEVICE SLEEP MODE |
| SEQUENTIAL READ | Up to 7,000 MB/s |
| SEQUENTIAL WRITE | Up to 5,000 MB/s |
| RANDOM READ (4KB, QD32) | Up to 1,000,000 IOPS |
| RANDOM WRITE (4KB, QD32) | Up to 1,000,000 IOPS |
| RANDOM READ (4KB, QD1) | Up to 22,000 IOPS |
| RANDOM WRITE (4KB, QD1) | Up to 60,000 IOPS |
| RELIABILITY (MTBF) | 1.5 Million Hours Reliability (MTBF) |
| OPERATING TEMPERATURE | 0 – 70 ℃ Operating Temperature |
| SHOCK | 1,500 G & 0.5 ms (Half sine) |
