Model | M.2 NVMe Gen4 |
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Model | MZ-V9P1T0BW (1TB) |
DIMENSION (WxHxD) | 80 x 22 x 2.3 mm |
WEIGHT | Max 9.0g Weight |
STORAGE MEMORY | Samsung V-NAND 3-bit MLC |
CONTROLLER | Samsung in-house Controller |
CACHE MEMORY | Samsung 1GB Low Power DDR4 SDRAM |
Special Feature | TRIM S.M.A.R.T Auto Garbage Collection Algorithm AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) DEVICE SLEEP MODE |
SEQUENTIAL READ | Up to 7,450 MB/s |
SEQUENTIAL WRITE | Up to 6,900 MB/s |
RANDOM READ (4KB, QD32) | Up to 1,200,000 IOPS |
RANDOM WRITE (4KB, QD32) | Up to 1,550,000 IOPS |
RANDOM READ (4KB, QD1) | Up to 22,000 IOPS |
RANDOM WRITE (4KB, QD1) | Up to 80,000 IOPS |
AVERAGE POWER CONSUMPTION | Average 5.4 W Maximum 7.8 W (Burst mode) |
POWER CONSUMPTION (IDLE) | 50 mW |
POWER CONSUMPTION (DEVICE SLEEP) | Max. 5 mW |
ALLOWABLE VOLTAGE | 3.3 V ± 5 % Allowable voltage |
RELIABILITY (MTBF) | 1.5 Million Hours Reliability (MTBF) |
OPERATING TEMPERATURE | 0 – 70 ℃ Operating Temperature |
SHOCK | 1,500 G & 0.5 ms (Half sine) |
MZ-V9P1T0BW (1TB) | 5-Year Limited Warranty or 600 TBW Limited Warranty |